Ultra-Fine Diamond Slurry Boosts SiC Wafer Processing Performance

Diamond’s Impact on Improving SiC Wafer Processing

Wafer manufacturers face a significant challenge in processing silicon carbide wafers. The task is to remove material at a controlled rate without causing scratching and defects to the SiC wafer surface. Diamond, the hardest material in the world, is used early on throughout the SiC wafer process to remove SiC material before the final polishing steps. Yet, due to the perceived risk of scratching, it is rarely used during the later polishing steps. 

During the final polishing step, chemical mechanical polishing (CMP) slurry is often used to polish the wafers to the desired surface finish without subsurface damage. Although effective, CMP takes a substantially long time to polish effectively, becoming a bottleneck in the SiC wafer process. 

Hyperion Materials & Technologies has developed a new ultra-fine diamond slurry with a micro-etched diamond surface. With an innovative surface containing many cutting points, the ultra-fine solution helps boost the processing time when polishing SiC wafers, decreasing the time it takes to develop an epi-ready wafer. By significantly enhancing the processing performance with exceptional surface quality in the latter stages of the SiC process, Hyperion's ultra-fine diamond offers a compelling option to reduce the traditional lengthy CMP stages. 

^{Hyperion's Diamond Slurries.}

Hyperion’s New Ultra-Fine Diamond Slurry Boosts Processing Performance of Silicon Carbide Wafers

Read the article "Boosting SiC Wafer Process Performance" and discover the benefits of utilizing Hyperion’s new ultra-fine solution to reduce the final CMP polishing time and enhance the overall SiC production process to generate high-quality SiC wafers. Download the tech note to learn how this innovative diamond option achieves a faster processing time than traditional CMP slurries alone.